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APT54GA60BD30 APT54GA60SD30
600V High Speed PT IGBT
TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE(ON) tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise immunity, short delay times and simple gate drive. The intrinsic chip gate resistance and capacitance of the poly-silicone gate structure help control di/dt during switching, result- APT54GA60BD30 ing in low EMI, even when switching at high frequency. Combi (IGBT and Diode)
(R)
FEATURES
* Fast switching with low EMI * Very Low Eoff for maximum efficiency * Ultra low Cres for improved noise immunity * Low conduction loss * Low gate charge * Increased intrinsic gate resistance for low EMI * RoHS compliant
TYPICAL APPLICATIONS
* ZVS phase shifted and other full bridge * Half bridge * High power PFC boost * Welding * UPS, solar, and other inverters * High frequency, high efficiency industrial
Absolute Maximum Ratings
Symbol
Vces IC1 IC2 ICM VGE PD SSOA TJ, TSTG TL
Parameter
Collector Emitter Voltage Continuous Collector Current @ TC = 25C Continuous Collector Current @ TC = 100C Pulsed Collector Current 1 Gate-Emitter Voltage
2
Ratings
600 96 54 161 30 416 161A @ 600V -55 to 150 300
Unit
V
A
V W
Total Power Dissipation @ TC = 25C Switching Safe Operating Area @ TJ = 150C Operating and Storage Junction Temperature Range Lead Temperature for Soldering: 0.063" from Case for 10 Seconds
C
Static Characteristics
Symbol
VBR(CES) VCE(on) VGE(th) ICES IGES
TJ = 25C unless otherwise specified
Test Conditions
VGE = 0V, IC = 1.0mA VGE = 15V, IC = 32A VCE = 600V, VGE = 0V TJ = 25C TJ = 125C 3 TJ = 25C TJ = 125C
Parameter
Collector-Emitter Breakdown Voltage Collector-Emitter On Voltage Gate Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current
Min
600
Typ
2.0 1.9 4.5
Max
2.5 6 275 3000 100
Unit
V
VGE =VCE , IC = 1mA
A
6 - 2009 052-6339 Rev C
VGS = 30V
nA
Microsemi Website - http://www.microsemi.com
Dynamic Characteristics
Symbol
Cies Coes Cres Qg Qge Qgc SSOA td(on) tr td(off) tf Eon2 Eoff td(on) tr td(off) tf Eon2 Eoff
TJ = 25C unless otherwise specified
Test Conditions
Capacitance VGE = 0V, VCE = 25V f = 1MHz Gate Charge VGE = 15V VCE= 300V IC = 32A TJ = 150C, RG = 10 4, VGE = 15V, L= 100uH, VCE = 600V Inductive Switching (25C) VCC = 400V VGE = 15V IC = 32A RG = 4.74 TJ = +25C Inductive Switching (125C) VCC = 400V VGE = 15V IC = 32A RG = 4.74 TJ = +125C 161
APT54GA60B_SD30
Min Typ
4130 350 45 158 28 52 nC pF
Parameter
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge
3
Max
Unit
Gate-Emitter Charge Gate- Collector Charge Switching Safe Operating Area Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy 6 Turn-On Delay Time Current Rise Time Turn-Off Delay Time Current Fall Time Turn-On Switching Energy Turn-Off Switching Energy 6
A 17 20 112 86 534 466 16 21 146 145 891 838 J ns J ns
Thermal and Mechanical Characteristics
Symbol
RJC RJC WT Torque
Characteristic
Junction to Case Thermal Resistance (IGBT) Junction to Case Thermal Resistance (Diode) Package Weight Mounting Torque (TO-247 Package), 4-40 or M3 screw
Min
-
Typ
-
Max
0.3 0.8
Unit
C/W g in*lbf
-
5.9
10
1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380s, duty cycle < 2%. 3 See Mil-Std-750 Method 3471. 4 RG is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 5 Eon2 is the clamped inductive turn on energy that includes a commutating diode reverse recovery current in the IGBT turn on energy loss. A combi device is used for the clamping diode. 6 Eoff is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein.
052-6339 Rev C
6 - 2009
Typical Performance Curves
100
V
GE
APT54GA60B_SD30
350 TJ= 25C IC, COLLECTOR CURRENT (A) 300 250 200 8V 150 100 50 0 7V 6V 5V 04 8 12 16 20 24 28 32 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 2, Output Characteristics (TJ = 25C)
I = 32A C T = 25C
J
= 15V
IC, COLLECTOR CURRENT (A)
TJ= 55C 75
15V 13V
10V 9V
TJ= 125C TJ= 150C
50
25
0
200
0 2 4 6 8 VCE, COLLECTOR-TO-EMITTER VOLTAGE (V) FIGURE 1, Output Characteristics (TJ = 25C) VGE, GATE-TO-EMITTER VOLTAGE (V)
250s PULSE TEST<0.5 % DUTY CYCLE
16 14 12 10 8 6 4 2 0 0 20 40 60 80 100 120 140 GATE CHARGE (nC) FIGURE 4, Gate charge 160
IC, COLLECTOR CURRENT (A)
150
VCE = 120V VCE = 300V
100
VCE = 480V
50
TJ= 25C TJ= 125C TJ= -55C 6 8 10 12 14
0
0
2
4
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
TJ = 25C. 250s PULSE TEST <0.5 % DUTY CYCLE
VCE, COLLECTOR-TO-EMITTER VOLTAGE (V)
4
VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 3, Transfer Characteristics
4
3
IC = 64A IC = 32A
3
IC = 64A IC = 32A
2 IC = 16A 1
2
1
VGE = 15V. 250s PULSE TEST <0.5 % DUTY CYCLE
IC = 16A
8 10 12 14 16 VGE, GATE-TO-EMITTER VOLTAGE (V) FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage
0
6
0
50 75 100 125 150 TJ, Junction Temperature (C) FIGURE 6, On State Voltage vs Junction Temperature
0
25
1.15
160 140 IC, DC COLLECTOR CURRENT (A) 120 100 80 6 - 2009 25 50 052-6339 Rev C 60 40 20 75 100 125 150 TC, Case Temperature (C) FIGURE 8, DC Collector Current vs Case Temperature 0
VGS(TH), THRESHOLD VOLTAGE (NORMALIZED)
1.10 1.05 1.00 0.95
0.90 0.85 0.80 0.75 0.70
0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE FIGURE 7, Threshold Voltage vs Junction Temperature
-50 -25
Typical Performance Curves
21 td(ON), TURN-ON DELAY TIME (ns) 20 19 VGE = 15V 18 17 16 15 14 200 td(OFF), TURN-OFF DELAY TIME (ns)
VCE = 400V TJ = 25C, or 125C RG = 4.7 L = 100H
APT54GA60B_SD30
160
VGE =15V,TJ=125C
120
80
VGE =15V,TJ=25C
40
VCE = 400V RG = 4.7 L = 100H
0 10 20 30 40 50 60 70 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 9, Turn-On Delay Time vs Collector Current 70 RG = 4.7, L = 100H, VCE = 400V 60
0 10 20 30 40 50 60 70 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 10, Turn-Off Delay Time vs Collector Current 200
0
160 50 tr, RISE TIME (ns) tr, FALL TIME (ns) 40 30 20 10 0
TJ = 25 or 125C,VGE = 15V TJ = 125C, VGE = 15V
120
80
TJ = 25C, VGE = 15V
40
RG = 4.7, L = 100H, VCE = 400V
0
10
20
30
40
50
60
70
ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 11, Current Rise Time vs Collector Current 2400 Eon2, TURN ON ENERGY LOSS (J) 2000 1600 1200 800 400 0
TJ = 25C
EOFF, TURN OFF ENERGY LOSS (J)
V = 400V CE V = +15V GE R =4.7
G
0 10 20 30 40 50 60 70 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 12, Current Fall Time vs Collector Current 2400 2000 1600 1200 800 400 0
TJ = 25C
V = 400V CE V = +15V GE R = 4.7
G
0
TJ = 125C
TJ = 125C
0 10 20 30 40 50 60 70 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 13, Turn-On Energy Loss vs Collector Current 6000 SWITCHING ENERGY LOSSES (J) 5000 4000 3000 2000 1000 0 10 20 30 40 50 RG, GATE RESISTANCE (OHMS) FIGURE 15, Switching Energy Losses vs Gate Resistance 0
Eoff,32A Eoff,64A
V = 400V CE V = +15V GE T = 125C
J
0 10 20 30 40 50 60 70 ICE, COLLECTOR-TO-EMITTER CURRENT (A) FIGURE 14, Turn-Off Energy Loss vs Collector Current 2400
V = 400V CE V = +15V GE R = 4.7
G
Eon2,64A
SWITCHING ENERGY LOSSES (J)
Eon2,64A
2000 1600 1200
Eoff,64A
6 - 2009
Eon2,32A
Eon2,32A Eon2,16A Eoff,16A
800 400 0
Eoff,32A Eon2,16A Eoff,16A
052-6339 Rev C
25 50 75 100 125 TJ, JUNCTION TEMPERATURE (C) FIGURE 16, Switching Energy Losses vs Junction Temperature
0
Typical Performance Curves
10000 Cies IC, COLLECTOR CURRENT (A) 100 C, CAPACITANCE (pF) 500
APT54GA60B_SD30
1000
10
Coes 100
1
Cres 10 0 100 200 300 400 500 VCE, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS) FIGURE 17, Capacitance vs Collector-To-Emitter Voltage
1 10 100 1000 VCE, COLLECTOR-TO-EMITTER VOLTAGE FIGURE 18, Minimum Switching Safe Operating Area
0.1
0.35 ZJC, THERMAL IMPEDANCE (C/W) 0.30 0.25 0.7 0.20 0.5 0.15 0.10 0.05 0 10-5 0.3 0.1 0.05 10
-4
D = 0.9
Note:
PDM
t1 t2
SINGLE PULSE 10 -3 10 -2
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10 -1
1.0
RECTANGULAR PULSE DURATION (SECONDS) Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
052-6339 Rev C
6 - 2009
APT54GA60B_SD30
10% Gate Voltage td(on) 90% TJ = 125C
APT30DQ60
tr
V CC IC V CE
Collector Current 5% Collector Voltage
5%
10%
A D.U.T.
Switching Energy
Figure 12, Inductive Switching Test Circuit
Figure 13, Turn-on Switching Waveforms and Definitions
90% td(off)
TJ = 125C Gate Voltage Collector Voltage
tf
10%
0
Collector Current
Switching Energy
Figure 14, Turn-off Switching Waveforms and Definitions
052-6339 Rev C
6 - 2009
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
MAXIMUM RATINGS Symbol Characteristic / Test Conditions
IF(AV) IF(RMS) IFSM Maximum Average Forward Current (TC = 117C, Duty Cycle = 0.5) RMS Forward Current (Square wave, 50% duty) Non-Repetitive Forward Surge Current (TJ = 45C, 8.3 ms)
All Ratings: TC = 25C unless otherwise specified. APT54GA60B_SD30
30 51 320 Amps
Unit
STATIC ELECTRICAL CHARACTERISTICS Symbol Characteristic / Test Conditions
IF = 30A VF Forward Voltage IF = 60A IF = 30A, TJ = 125C
Min
Type
2.0 2.4 1.7
Max
Unit
Volts
DYNAMIC CHARACTERISTICS Symbol Characteristic
trr trr Qrr IRRM trr Qrr IRRM trr Qrr IRRM Reverse Recovery Time Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current Reverse Recovery Time Reverse Recovery Charge Maximum Reverse Recovery Current IF = 30A, diF/dt = -1000A/s VR = 400V, TC = 125C IF = 30A, diF/dt = -200A/s VR = 400V, TC = 125C IF = 30A, diF/dt = -200A/s VR = 400V, TC = 25C
Test Conditions
IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C
Min
-
Typ 23 30 55 3 175 485 6 75 855 22
Max
-
Unit
ns
nC Amps ns nC Amps ns nC Amps
0.90 ZJC, THERMAL IMPEDANCE (C/W) 0.80 D = 0.9 0.70 0.60 0.50 0.40 0.30 0.20 0.10 0 10-5 0.1 0.05 10-4 SINGLE PULSE 0.5
Note:
0.7
PDM
t1 t2
0.3
Duty Factor D = 1/t2 Peak TJ = PDM x ZJC + TC
t
10-3 10-2 10-1 1.0 RECTANGULAR PULSE DURATION (seconds) FIGURE 1a. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
052-6339 Rev C
6 - 2009
Dynamic Characteristics
100
TJ = 25C unless otherwise specified
200 trr, REVERSE RECOVERY TIME (ns) 180 160 60A
APT54GA60B_SD30
T = 125C J V = 400V
R
IF, FORWARD CURRENT (A)
80 TJ = 175C 60 TJ = 125C 40 TJ = -55C 20 TJ = 25C 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage 1200 0 0
30A 140 120 100 15A 80 60 40 20
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change IRRM, REVERSE RECOVERY CURRENT (A) 25
T = 125C J V = 400V
R
0
Qrr, REVERSE RECOVERY CHARGE (nC)
T = 125C J V = 400V
R
60A
1000 60A 800 30A 600 15A
20
15
30A
10
400
200 0
5
15A
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 1.2 Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) Qrr trr trr 0.8
0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 60
Duty cycle = 0.5 T = 175C
J
0
1.0
50
0.6
IF(AV) (A)
IRRM
40
30
0.4 Qrr
20
0.2 0.0
10 0
25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 200 180 CJ, JUNCTION CAPACITANCE (pF) 160 140 120 100 80 60 40 20 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 0 1
0
75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature
25
50
052-6339 Rev C
6 - 2009
Dynamic Characteristics
TJ = 25C unless otherwise specified
Vr
APT54GA60B_SD30
+18V 0V
diF /dt Adjust
APT30GT60BR
D.U.T. 30H
trr/Qrr Waveform
PEARSON 2878 CURRENT TRANSFORMER
Figure 9. Diode Test Circuit
1 2 3 4
IF - Forward Conduction Current diF /dt - Rate of Diode Current Change Through Zero Crossing. IRRM - Maximum Reverse Recovery Current. Zero
1
4
5 3 2
0.25 IRRM
trr - Reverse Recovery Time, measured from zero crossing where diode current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Qrr - Area Under the Curve Defined by IRRM and trr.
5
Figure 10, Diode Reverse Recovery Waveform and Definitions
TO-247 (B) Package Outline
e3 100% Sn Plated
(Heat Sink)
Collector (Cathode)
4.69 (.185) 5.31 (.209) 1.49 (.059) 2.49 (.098) 6.15 (.242) BSC
D3PAK Package Outline
4.98 (.196) 5.08 (.200) 1.47 (.058) 1.57 (.062) 15.95 (.628) 16.05(.632) 13.41 (.528) 13.51(.532)
15.49 (.610) 16.26 (.640) 5.38 (.212) 6.20 (.244)
1.04 (.041) 1.15(.045)
Collector (Cathode)
20.80 (.819) 21.46 (.845) 3.50 (.138) 3.81 (.150)
Revised 4/18/95
13.79 (.543) 13.99(.551)
Revised 8/29/97
11.51 (.453) 11.61 (.457)
0.46 (.018) 0.56 (.022) {3 Plcs}
4.50 (.177) Max. 0.40 (.016) 0.79 (.031) 2.87 (.113) 3.12 (.123) 1.65 (.065) 2.13 (.084) 1.01 (.040) 1.40 (.055)
0.020 (.001) 0.178 (.007) 2.67 (.105) 2.84 (.112)
1.27 (.050) 1.40 (.055) 1.98 (.078) 2.08 (.082) 5.45 (.215) BSC {2 Plcs.}
Gate Collector (Cathode)
Emitter (Anode)
2.21 (.087) 2.59 (.102) 5.45 (.215) BSC 2-Plcs.
Dimensions in Millimeters and (Inches)
Gate Dimensions in Millimeters (Inches)
Microsemi's products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved.
052-6339 Rev C
Emitter (Anode) Collector (Cathode)
6 - 2009
19.81 (.780) 20.32 (.800)
1.22 (.048) 1.32 (.052)
3.81 (.150) 4.06 (.160) (Base of Lead)
Heat Sink (Drain) and Leads are Plated

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